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| PD - 91269I IRF7507 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 D1 D1 D2 D2 N-Ch P-Ch 2 7 3 6 VDSS 20V -20V 4 5 P -C HANNE L M O S F E T T op V ie w RDS(on) 0.135 0.27 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M icro 8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds N-Channel 20 2.4 1.9 19 1.25 0.8 10 12 16 5.0 -5.0 -55 to + 150 240 (1.6mm from case) Max. P-Channel -20 -1.7 -1.4 -14 Units V A W W mW/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 100 Units C/W www.irf.com 1 12/1/98 IRF7507 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. Units Conditions N-Ch 20 -- -- VGS = 0V, ID = 250A V P-Ch -20 -- -- VGS = 0V, ID = -250A N-Ch -- 0.041 -- Reference to 25C, ID = 1mA V/C P-Ch -- -0.012 -- Reference to 25C, ID = -1mA -- 0.085 0.14 VGS = 4.5V, ID = 1.7A N-Ch -- 0.120 0.20 VGS = 2.7V, ID = 0.85A -- 0.17 0.27 VGS = -4.5V, ID =-1.2A P-Ch -- 0.28 0.40 VGS = -2.7V, ID =-0.6A N-Ch 0.7 -- -- VDS = VGS, ID = 250A V P-Ch -0.7 -- -- VDS = VGS, ID = -250A N-Ch 2.6 -- -- VDS = 10V, ID = 0.85A S P-Ch 1.3 -- -- VDS = -10V, ID = -0.6A N-Ch -- -- 1.0 VDS = 16 V, VGS = 0V P-Ch -- -- -1.0 VDS = -16V, VGS = 0V A N-Ch -- -- 25 VDS = 16 V, VGS = 0V, TJ = 125C P-Ch -- -- -25 VDS = -16V, VGS = 0V, TJ = 125C N-P -- -- 100 VGS = 12V N-Ch -- 5.3 8.0 N-Channel P-Ch -- 5.4 8.2 ID = 1.7A, VDS = 16V, VGS = 4.5V N-Ch -- 0.84 1.3 nC P-Ch -- 0.96 1.4 P-Channel N-Ch -- 2.2 3.3 ID = -1.2A, VDS = -16V, VGS = -4.5V P-Ch -- 2.4 3.6 N-Ch -- 5.7 -- N-Channel P-Ch -- 9.1 -- VDD = 10V, ID = 1.7A, RG = 6.0, N-Ch -- 24 -- RD = 5.7 P-Ch -- 35 -- ns N-Ch -- 15 -- P-Channel P-Ch -- 38 -- VDD = -10V, ID = -1.2A, RG = 6.0, N-Ch -- 16 -- RD = 8.3 P-Ch -- 43 -- N-Ch -- 260 -- N-Channel P-Ch -- 240 -- VGS = 0V, VDS = 15V, = 1.0MHz N-Ch -- 130 -- pF P-Ch -- 130 -- P-Channel N-Ch -- 61 -- VGS = 0V, VDS = -15V, = 1.0MHz P-Ch -- 64 -- V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Transconductance I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf C iss C oss C rss Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Ratings and Characteristics Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 1.25 -- -- -1.25 A -- -- 19 -- -- -14 -- -- 1.2 TJ = 25C, IS = 1.7A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -1.2A, VGS = 0V -- 39 59 N-Channel ns -- 52 78 TJ = 25C, IF = 1.7A, di/dt = 100A/s -- 37 56 P-Channel nC TJ = 25C, IF = -1.2A, di/dt = -100A/s -- 63 95 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 21 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com N - Channel 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP IRF7507 100 I , D rain-to-S ourc e C urrent (A ) D 10 I , D rain-to-S ource C urrent (A ) D 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 1 1 1.5V 0.1 0.1 0.01 0.1 1 1.5V 20 s P U LS E W ID TH TJ = 25C A 10 0.01 0.1 1 20 s P U LS E W ID TH TJ = 150C A 10 V D S , D rain-to-S ourc e V oltage (V ) V D S , D rain-to-S ource Voltage (V ) Fig 1. Typical Output Characteristics 100 Fig 2. Typical Output Characteristics 100 I D , D rain-to-S ource C urrent (A ) I S D , R everse D rain C urrent (A ) 10 10 T J = 1 5 0 C T J = 2 5 C T J = 150C 1 1 T J = 25C 0.1 1.5 2.0 2.5 V DS = 10V 2 0 s P U L S E W ID T H 3.0 3.5 4.0 A 0.1 0.4 VG S = 0V 0.6 0.8 1.0 1.2 1.4 1.6 A 1.8 V G S , G a te -to -S o u rce V o lta g e (V ) V S D , Sourc e-to-D rain V oltage (V ) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage 0.8 2.0 R D S(on) , Drain-to-Source On Resistance (N orm alized) RDS(on) , Drain-to-Source On Resistance I D = 1.7A 1.5 0.6 1.0 0.4 V 0.2 GS = 2.5V 0.5 0.0 -60 -40 -20 0 20 40 60 80 V G S = 4.5 V 100 120 140 160 A 0.0 0 V G S = 5.0V 2 4 6 A T J , Junction Tem perature (C ) I D , D ra in C urren t (A ) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current www.irf.com 3 IRF7507 ( N - Channel 0.13 100 R D S (o n ) , D ra in -to -S o u rc e O n R e s is ta n c e OPERATION IN THIS AREA LIMITED BY RDS(on) 0.11 10us I D , Drain Current (A) 10 100us 0.09 I D = 2.4 A 1ms 1 10ms 0.07 0.05 2 3 4 5 6 7 8 A 0.1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 V G S , G ate-to-S ource V oltage (V ) VDS , Drain-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 500 Fig 8. Maximum Safe Operating Area -V G S , G ate-to-S ourc e V oltage (V ) 400 V GS = C is s = C rs s = C o ss = 0V , f = 1M H z C gs + C g d , Cd s S H O R TE D C gd C ds + C gd 10 I D = 1.7A V D S = 16V 8 C , C a p a c ita n c e ( p F ) C iss 300 6 C oss 200 4 C rss 100 2 0 1 10 100 A 0 0 2 4 FO R TE S T C IR C U IT S E E F IG U R E 9 6 8 10 A V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C harge (nC ) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 4 www.irf.com IRF7507 P - Channel 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 100 -I D , D rain-to-S ourc e C urrent (A ) -ID , D rain-to-S ourc e C urrent (A ) 10 10 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 1 1 0.1 0.1 -1.5V -1.5V 0.01 0.1 1 20s P U LS E W ID TH TJ = 25C A 10 0.01 0.1 1 20 s P U LS E W ID TH TJ = 150C 10 A -V D S , D rain-to-S ource Voltage (V ) -VD S , D rain-to-Source V oltage (V) Fig 11. Typical Output Characteristics 10 Fig 12. Typical Output Characteristics 10 -I D , D rain-to-S ource C urrent (A ) T J = 1 5 0 C 1 -I S D , R everse D rain C urrent (A ) T J = 2 5 C T J = 1 50 C 1 T J = 2 5C 0.1 0.1 0.01 1.5 2.0 2.5 3.0 V D S = -1 0 V 2 0 s P U L S E W ID T H 3.5 4.0 4.5 5.0 A 0.01 0.4 0.6 0.8 1.0 V G S = 0V A 1.2 -VG S , G a te -to -S o u rce V o lta g e (V ) -VS D , S ourc e-to-D rain V oltage (V ) Fig 13. Typical Transfer Characteristics 2.0 Fig 14. Typical Source-Drain Diode Forward Voltage 1.0 R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) I D = -1.2A R DS (on), Drain-to-Source On Resistance 0.8 1.5 0.6 1.0 VGS = -2.5V 0.4 0.5 VGS = -5.0V 0.2 0.0 -60 -40 -20 0 20 40 60 80 V G S = -4.5V 100 120 140 160 A 0.0 0.0 0.5 1.0 1.5 2.0 T J , Junction Tem perature (C ) -I D , Drain Current (A) Fig 15. Normalized On-Resistance Vs. Temperature Fig 16. Typical On-Resistance Vs. Drain Current www.irf.com 5 IRF7507 P - Channel 0.300 100 R DS (on) , Drain-to-Source On Resistance OPERATION IN THIS AREA LIMITED BY RDS(on) 0.250 -ID , Drain Current (A) I 10 100us ID = -1.7A 0.200 1ms 1 10ms 0.150 0.100 2 3 4 5 6 7 8 0.1 1 TC = 25 C TJ = 150 C Single Pulse 10 100 -VGS , Gate-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 500 Fig 18. Maximum Safe Operating Area 10 400 -V G S , G ate-to-S ource V oltage (V ) V GS C iss C rs s C oss = = = = 0V, f = 1MHz C gs + C gd , C ds S H O R TE D C gd C ds + C gd I D = -1.2A V D S = -16V 8 C , C ap ac itan c e (p F ) C is s 300 6 C oss 200 4 C rs s 100 2 0 1 10 100 A 0 0 2 4 FOR TES T C IR C U IT SE E FIG U R E 19 6 8 10 A -V D S , D rain-to-S ource V oltage (V ) Q G , Total G ate C h arge (nC ) Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel 1000 Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 P DM t1 t2 0.1 0.00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF7507 Package Outline Micro8 Outline Dimensions are shown in millimeters (inches) LE AD A S S IG N M EN T S D -B3 DDDD 8765 3 E -A1234 SSSG S1 G 1 S2 G 2 8765 H 0.25 (.010) M A M S IN G LE 1234 D U AL 1234 D 1 D1 D 2 D 2 8765 D IM IN C H ES M IN M AX M ILLIM E TE R S M IN MAX A A1 B C D e e1 E H L .0 36 .0 04 .0 10 .005 .116 .0 44 .0 08 .0 14 .0 07 .1 20 0 .9 1 0 .1 0 0 .2 5 0 .13 2 .95 1 .11 0 .20 0 .36 0.18 3.05 .0 256 B A SIC .0 128 B A SIC .1 16 .188 .0 16 0 .1 20 .1 98 .026 6 0 .65 BA S IC 0 .33 BA S IC 2.9 5 4 .78 0 .4 1 0 3 .0 5 5.03 0 .66 6 e 6X e1 A -CB 8X 0.08 (.003) M A1 C AS BS 0.10 (.004) L 8X C 8X R E C O M M E ND E D FO O T P RIN T 1.04 ( .041 ) 8X 0.38 8X ( .015 ) 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) NO TES : 1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H . 0.65 6X ( .0256 ) Part Marking Information Micro8 E X AM PLE : T H IS IS A N IR F 7501 A D A T E C O D E (YW W ) Y = LA S T D IG IT O F YE A R W W = W EE K 451 7501 PART NUMBER TO P www.irf.com 7 IRF7507 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -54 1 . 2 . C O N T R O L L IN G D IM E N SIO N : M IL L IM ET E R . 33 0.00 (1 2 .9 9 2 ) M AX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 12/98 8 www.irf.com |
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